T10XXXH ? january 1995 standard triacs symbol parameter value unit i t(rms) rms on-state current (360 conductionangle) tc= 95 c10 a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 8.3 ms 105 a tp = 10 ms 100 i 2 ti 2 t value for fusing tp = 10 ms 50 a 2 s di/dt critical rate of rise of on-state current i g = 500 ma di g /dt = 1 a/ m s. repetitive f=50hz 10 a/ m s non repetitive 50 t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s at 4.5mm from case 260 c absolute ratings (limiting values) i t(rms) =10a v drm = 400v to 800v high surge current capability features symbol parameter voltage unit dmsn v drm v rrm repetitive peak off-state voltage t j = 125 c 400 600 700 800 v the T10XXXH series of triacs uses a high performance mesa glass technology. these parts are intended for general purpose switching and phase control applications. description a1 g a2 to220 non-insulated (plastic) 1/5
p g (av) =1w p gm =10w(tp =20 m s) i gm =4a(tp=20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient 60 c/w rth(j-c) junction to case for d.c 3.3 c/w rth(j-c) junction to case for a.c 360 conduction angle (f=50hz) 2.5 c/w thermal resistances symbol test conditions quadrant sensitivity unit 10 12 13 i gt v d =12v (dc) r l =33 w tj= 25 c i-ii-iii max 25 50 50 ma iv max 25 50 75 v gt v d =12v (dc) r l =33 w tj= 25 c i-ii-iii-iv max 1.5 v v gd v d =v drm r l =3.3k w tj= 125 c i-ii-iii-iv min 0.2 v tgt v d =v drm i g = 500ma i t =14a di g /dt = 3a/ m s tj= 25 c i-ii-iii-iv typ 2 m s i h *i t = 250 ma gate open tj= 25 c max 25 50 75 ma i l i g =1.2i gt tj= 25 c i-iii-iv typ 25 50 75 ma ii typ 50 100 150 v tm *i tm = 14a tp= 380 m s tj= 25 c max 1.5 v i drm i rrm v d =v drm v r =v rrm tj= 25 c max 10 m a tj= 110 c max 2 ma dv/dt * vd=67%v drm gate open tj= 110 c min 200 500 500 v/ m s (dv/dt)c * (di/dt)c = 4.4 a/ms tj= 110 c min 2 5 10 v/ m s * for either polarity of electrode a 2 voltage with reference to electrode a 1 electrical characteristics ordering information t1012mh triac mesa glass current package : h = to220 non-insulated voltage sensitivity ? T10XXXH 2/5
012345678910 0 2 4 6 8 10 12 14 180 o =180 o = 120 o =90 o =60 o =30 o t(rms) i (a) p(w) fig.1 : maximum rms power dissipation versus rms on-state current. 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 2 4 6 8 10 12 =180 o tcase ( c) o i (a) t(rms) fig.3 : rms on-state current versus case tempera- ture. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 igt tj( c) o ih -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 20406080100120140 0 2 4 6 8 10 12 14 -90 -95 -100 -105 -110 -115 -120 -125 p(w) tamb ( c) o tcase ( c) o rth = 0 c/w 2.5 c/w 5c/w 7.5 c/w o o o o fig.2 : correlation between maximum rms power dissipation and maximum allowable temperature (tamb and tcase) for different thermal resistances heatsink + contact. 1e-3 1e-2 1e-1 1e +0 1 e +1 1e +2 5 e+2 0.01 0.1 1 zth/rth zt h( j-c) zt h( j-a) tp (s) fig.4 : relative variation of thermal impedance versus pulse duration. 1 10 100 100 0 0 20 40 60 80 100 tj initial = 25 c o number of cycles i (a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. ? T10XXXH 3/5
110 1 10 100 1000 i (a). i 2 t(a 2 s) tsm tj initial = 25 c o i tsm t(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and cor- responding value of i 2 t. 00.511.522.533.544.55 1 10 100 i (a) tm tj initial 25 c o tj max v (v) tm tj max vto =0.86v rt =0.042 fig.8 : on-state characteristics (maximum values). ? T10XXXH 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-tho mson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. package mechanical data to220 non-insulated (plastic) d g i h j b a l n1 m n o p c f ref. dimensions millimeters inches typ. min. max. typ. min. max. a 10.3 0.406 b 6.3 6.5 0.248 0.256 c 9.1 0.358 d 12.7 0.500 f 4.2 0.165 g 3.0 0.118 h 4.5 4.7 0.177 0.185 i 3.53 3.66 0.139 0.144 j 1.2 1.3 0.047 0.051 l 0.9 0.035 m 2.7 0.106 n 5.3 0.209 n1 2.54 0.100 o 1.2 1.4 0.047 0.055 p 1.15 0.045 marking : type number weight : 1.8 g ? T10XXXH 5/5
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